当前位置:
X-MOL 学术
›
J. Phys. Chem. Solids
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Transport mechanism in amorphous molybdenum silicide thin films
Journal of Physics and Chemistry of Solids ( IF 4 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.jpcs.2020.109818 Zhengyuan Liu , Bingcheng Luo , Junbiao Hu , Cheng Xing
Journal of Physics and Chemistry of Solids ( IF 4 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.jpcs.2020.109818 Zhengyuan Liu , Bingcheng Luo , Junbiao Hu , Cheng Xing
Abstract Amorphous molybdenum silicide compounds have attracted significant interest because of their potential applications in devices, particularly single-photon detectors. In this study, we measured the temperature-dependent resistance and magnetoresistance behavior of amorphous molybdenum silicide compounds to understand the charge transport mechanism, which is of great importance for applications but still unclear. We found that Mott variable hopping conductivity dominated the charge transport in sputtered amorphous molybdenum silicide thin films. In addition, the observed magnetoresistance crossover from negative to positive was ascribed to enhanced interference and shrinkage of the electron wave function, where both varied the probability of hopping between localized sites.
中文翻译:
非晶硅化钼薄膜的传输机制
摘要 非晶硅化钼化合物因其在器件,特别是单光子探测器中的潜在应用而引起了极大的兴趣。在这项研究中,我们测量了非晶硅化钼化合物的温度依赖性电阻和磁阻行为,以了解电荷传输机制,这对应用非常重要但仍不清楚。我们发现莫特可变跳跃电导率主导了溅射非晶硅化钼薄膜中的电荷传输。此外,观察到的从负到正的磁阻交叉归因于电子波函数的增强干扰和收缩,两者都改变了局部站点之间跳跃的概率。
更新日期:2021-02-01
中文翻译:
非晶硅化钼薄膜的传输机制
摘要 非晶硅化钼化合物因其在器件,特别是单光子探测器中的潜在应用而引起了极大的兴趣。在这项研究中,我们测量了非晶硅化钼化合物的温度依赖性电阻和磁阻行为,以了解电荷传输机制,这对应用非常重要但仍不清楚。我们发现莫特可变跳跃电导率主导了溅射非晶硅化钼薄膜中的电荷传输。此外,观察到的从负到正的磁阻交叉归因于电子波函数的增强干扰和收缩,两者都改变了局部站点之间跳跃的概率。