Abstract The impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts. Compared with the TiOx/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ·cm2 are obtained by using SiOy interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiOx interlayers is lower than that of heterocontacts without a SiOy interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiOx/c-Si and TiOx/SC2-SiOy/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiOx/SC2-SiOy/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.

中文翻译：

---

高性能氧化钛载流子选择性接触与氧化硅中间层的氢解吸活化能

摘要 为了开发高性能的 TiOx 载流子选择性接触，研究了氢解吸对具有 SiOy 夹层的晶体硅 (c-Si) 上 TiOx 电性能的影响。与 TiOx/c-Si 异质接触相比，通过使用由混合物形成的 SiOy 夹层（通常称为 SC2）获得了 9.6 cm/s 的较低表面复合速度和 7.1 mΩ·cm2 的较低接触电阻率。观察到在沉积样品的 c-Si 表面上由二氢化硅 (α1) 和一氢化硅 (α2) 产生的氢解吸峰。具有 SiOx 夹层的沉积异质接触的 α1 峰值压力低于没有 SiOy 夹层的异质接触。此外，发现氢解吸能分别为 1.76 和 2。TiOx/c-Si 和 TiOx/SC2-SiOy/c-Si 异质接触分别为 13 eV。因此，TiOx/SC2-SiOy/c-Si 异质接触的优异钝化归因于 Si 和 H 原子之间相对较高的键合断裂能。