Abstract We have investigated effects of carbon pre-implantation (C-implantation) on electrical and morphological properties of nickel silicide (NiSi). C-implanted NiSi showed an improved thermal stability on the electrical characteristics in terms of sheet resistance (Rsh) and contact resistivity (ρc) after rapid thermal annealing (RTA) up to 700 °C. The process temperature window was extended by ~100 °C when the C-implantation with a dose of 1 × 1015 cm−2 was introduced. From transmission electron microscopy (TEM) images, the suppression of NiSi agglomeration was confirmed in the C-implanted NiSi. In order to further understand the role of carbon, atom probe tomography (APT) was performed. The three-dimensional (3D) distribution and composition of elements by APT unveiled the formation of carbon clusters with a diameter ranging from 2 to 10 nm near the NiSi/Si interface. The carbon clusters with a peak concentration of 6.0 at. % at the NiSi/Si interface can effectively suppress NiSi agglomeration and Ni diffusion, resulting in improving thermal stability of the NiSi.

中文翻译：

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通过碳预注入对热稳定镍硅化物中的碳簇进行三维成像

摘要 我们研究了碳预注入（C-注入）对硅化镍 (NiSi) 电学和形态学性质的影响。在高达 700 °C 的快速热退火 (RTA) 后，C 注入的 NiSi 在薄层电阻 (Rsh) 和接触电阻率 (ρc) 方面显示出改善的电气特性热稳定性。当引入剂量为 1 × 1015 cm-2 的 C 注入时，工艺温度窗口扩展了约 100 °C。根据透射电子显微镜 (TEM) 图像，在 C 注入的 NiSi 中证实了 NiSi 团聚的抑制。为了进一步了解碳的作用，进行了原子探针断层扫描（APT）。APT 的三维 (3D) 分布和元素组成揭示了在 NiSi/Si 界面附近形成了直径为 2 到 10 nm 的碳簇。碳簇的峰值浓度为 6.0 at。NiSi/Si 界面处的 % 可以有效抑制 NiSi 的团聚和 Ni 扩散，从而提高 NiSi 的热稳定性。