Abstract The plethora of new transition metal dichalcogenides (TMDs) materials have attracted a major attention during the last years due to a diversity of new possibilities of applications in different areas from electronic and photonic devices to new sensors and catalysts, as well as a large playground of 2D materials to explore new physical phenomena. Many efforts have been done to develop new growth techniques that can produce single-layer TMDs in large areas and with high quality (low density of defects). Another important issue for electronic device integration is how to perform electrical contacts that show a metallic behavior instead semiconductor junctions. In this work, we have systematically studied the epitaxial growth of MoS 2 on Ag(1 1 1) using the physical vapor deposition method (PVD). The results, based on a multiple technique approach, demonstrate that is possible to produce a single-layer 1 H - MoS 2 film on Ag(1 1 1). The material presents a metallic behavior due to an electronic hybridization between the MoS 2 states and the Ag(1 1 1) states as results of the strong TMD-substrate interaction at the interface. This metallic character is preserved even after exposure to atmosphere and hostile oxidation environment which indicates that silver is probably an excellent candidate to perform metal contacts on sulfur-based TMDs.

中文翻译：

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Ag(111) 上单层 MoS2 氧化下的外延生长、电子杂化和稳定性

摘要 在过去几年中，由于从电子和光子器件到新型传感器和催化剂等不同领域的各种新应用可能性，以及一个大型游乐场，大量的新型过渡金属二硫属化物 (TMD) 材料引起了人们的极大关注。 2D 材料以探索新的物理现象。已经进行了许多努力来开发新的生长技术，该技术可以大面积生产高质量（低缺陷密度）的单层 TMD。电子设备集成的另一个重要问题是如何执行显示金属行为而不是半导体结的电接触。在这项工作中，我们使用物理气相沉积方法 (PVD) 系统地研究了 MoS 2 在 Ag(1 1 1) 上的外延生长。结果，基于多种技术方法，证明可以在 Ag(1 1 1) 上生产单层 1 H - MoS 2 薄膜。由于在界面处的强 TMD-衬底相互作用，MoS 2 态和 Ag(1 1 1) 态之间的电子杂化导致该材料呈现金属行为。即使暴露于大气和恶劣的氧化环境后，这种金属特性仍能保持，这表明银可能是在硫基 TMD 上进行金属接触的极好候选者。