MnSbInS₄ multi-component semiconductor thin films are prepared by chemical spray pyrolysis on glass substrates at various substrate temperatures ranging from 250-400 °C with a constant spray time (5mins). The structural, morphological, optical and electrical properties of the thin films are investigated through different techniques such as X-ray diffraction (XRD), electron diffraction spectroscopy (EDS), UV-Vis absorption spectroscopy and four probe method. The X-ray spectra reveal that the MnSbInS₄ films are polycrystalline in nature with a cubic spinel structure having (220) plane as the preferred orientation. The energy dispersive analysis by X-ray (EDS) studies confirm the presence of Mn, In, Sb and S in the film grown at a substrate temperature of 250 °C. Optical measurements allow us to determine the absorption coefficient which is as high as (1.22 x 10⁵ cm^-1) at 250 ºC indicating that MnSbInS₄ compound has an absorbing property favorable for applications in solar cell devices. It is interesting to note that the structural homogeneity and crystallinity of the films is improved due to the decrease in absorption coefficient (α) and extinction coefficient (k) with an increase of substrate temperature. The observations from photoluminescence measurements reveal that the photoemission is mainly due to the donar-acceptor pair transitions. Moreover, from the electrical studies, it is observed that the electrical resistivity (ρ ) is strongly affected by substrate temperature and the lowest resistivity (ρ = 4.77 x 10³ Ω m ) is obtained for the film grown at 400 ºC. Stylus profilometer was used to measure the film thickness and the values range between 768 nm (250 °C) to 617 nm (400 °C). This indicates that, as the substrate temperature increases, the thickness of the film decreases. Other important parameters like micro-strain (ε) and dislocation density (δ) which are commonly used to describe the structural analysis are also presented.

中文翻译：

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衬底温度对用于光伏应用的简化喷雾热解技术制备的MnSbInS4薄膜物理性能的影响

MnSbInS ₄多组分半导体薄膜是通过在250-400°C的各种基板温度下以恒定的喷射时间（5分钟）在玻璃基板上化学喷雾热解制备的。通过不同的技术，如X射线衍射（XRD），电子衍射光谱（EDS），紫外-可见吸收光谱和四探针法研究了薄膜的结构，形态，光学和电学性质。X射线光谱显示MnSbInS ₄膜本质上是多晶的，具有（220）面作为优选取向的立方尖晶石结构。通过X射线（EDS）研究进行的能量色散分析证实，在衬底温度为250°C的情况下生长的薄膜中存在Mn，In，Sb和S。光学测量使我们能够确定在250ºC时高达（1.22 x 10 ⁵ cm ^-1）的吸收系数，表明MnSbInS ₄该化合物具有有利于太阳能电池装置应用的吸收性能。有趣的是，由于吸收系数（α）和消光系数（k）随着基板温度的升高而降低，从而改善了薄膜的结构均匀性和结晶性。从光致发光测量中观察到的结果表明，光发射主要归因于对电子受体对的跃迁。此外，从电学研究中可以看出，电阻率（ρ）受衬底温度和最低电阻率（ρ= 4.77 x 10 ³）的强烈影响。对于在400ºC下生长的薄膜，可获得Ωm）。测针轮廓仪用于测量薄膜厚度，其值范围介于768 nm（250°C）至617 nm（400°C）之间。这表明，随着基板温度的升高，膜的厚度减小。还介绍了通常用于描述结构分析的其他重要参数，如微应变（ε）和位错密度（δ）。