We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) with buried GaInN tunnel junctions (TJs). Under room-temperature continuous-wave operation, the VCSEL with an 8 μm aperture exhibited a low operating voltage of 5.3V at 10kAcm⁻² and a differential resistance of 110 Ω. In addition, the VCSEL with a 10 μm aperture showed a threshold current of 14.4mA and a peak output power of 2.0mW. An influence of an absorption loss at the GaInN TJ on laser performance was estimated using an analysis of a one-dimensional optical intensity profile based on a cross-sectional STEM image.

中文翻译：

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具有埋入式 GaInN 隧道结的 GaN 基垂直腔面发射激光器的室温连续波操作

我们报告了具有掩埋 GaInN 隧道结 (TJ) 的基于 GaN 的垂直腔面发射激光器 (VCSEL)。下室温连续波操作中，用8的VCSEL μ米孔陈列在10kAcm 5.3V的低工作电压^-2和110Ω的微分电阻。此外，具有10的VCSEL μ米孔径显示14.4毫安的阈值电流和2.0MW的峰值输出功率。使用基于横截面 STEM 图像的一维光强度分布分析来估计 GaInN TJ 处的吸收损耗对激光性能的影响。