Single-walled carbon nanotubes (SWNTs) emerge as a promising material to advance carbon nanoelectronics. However, synthesizing or assembling pure metallic/semiconducting SWNTs required for interconnects/integrated circuits, respectively, by a conventional chemical vapor deposition method or by an assembly technique remains challenging. Recent studies have shown significant scientific breakthroughs in controlled SWNT synthesis/assembly and applications in scaled field effect transistors, which are a critical component in functional nanodevices, thereby rendering the horizontal SWNT array an important candidate for innovating nanotechnology. This review provides a comprehensive analysis of the controlled synthesis, surface assembly, characterization techniques, and potential applications of horizontally aligned SWNT arrays. This review begins with the discussion of synthesis of horizontally aligned SWNTs with regulated direction, density, structure, and theoretical models applied to understand the growth results. Several traditional procedures applied for assembling SWNTs on target surface are also briefly discussed. It then discusses the techniques adopted to characterize SWNTs, ranging from electron/probe microscopy to various optical spectroscopy methods. Prototype applications based on the horizontally aligned SWNTs, such as interconnects, field effect transistors, integrated circuits, and even computers, are subsequently described. Finally, this review concludes with challenges and a brief outlook of the future development in this research field.

中文翻译：

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水平单壁碳纳米管阵列：受控合成，表征和应用。

单壁碳纳米管（SWNT）成为推动碳纳米电子学发展的有前途的材料。然而，分别通过常规化学气相沉积方法或通过组装技术来合成或组装互连/集成电路所需的纯金属/半导体SWNT仍然具有挑战性。最近的研究表明，在受控的SWNT合成/组装和比例场效应晶体管中的应用方面取得了重大的科学突破，而比例场效应晶体管是功能纳米器件中的关键组件，从而使水平SWNT阵列成为创新纳米技术的重要候选者。本文对水平排列的SWNT阵列的受控合成，表面组装，表征技术和潜在应用进行了全面分析。这篇综述首先讨论了水平排列的单壁碳纳米管的合成，并采用了可调节的方向，密度，结构和理论模型来理解生长结果。还简要讨论了用于在目标表面上组装SWNT的几种传统过程。然后讨论了用于表征单壁碳纳米管的技术，范围从电子/探针显微镜到各种光谱学方法。随后将描述基于水平对齐的SWNT的原型应用，例如互连，场效应晶体管，集成电路，甚至是计算机。最后，本综述以挑战和对本研究领域未来发展的简要展望作了总结。运用理论模型来了解增长结果。还简要讨论了用于在目标表面上组装SWNT的几种传统过程。然后讨论了用于表征单壁碳纳米管的技术，范围从电子/探针显微镜到各种光谱学方法。随后将描述基于水平对齐的SWNT的原型应用，例如互连，场效应晶体管，集成电路，甚至是计算机。最后，本综述以挑战和对本研究领域未来发展的简要展望作了总结。运用理论模型来了解增长结果。还简要讨论了用于在目标表面上组装SWNT的几种传统过程。然后讨论了用于表征单壁碳纳米管的技术，范围从电子/探针显微镜到各种光谱学方法。随后将描述基于水平对齐的SWNT的原型应用，例如互连，场效应晶体管，集成电路，甚至是计算机。最后，本综述以挑战和对本研究领域未来发展的简要展望作了总结。从电子/探针显微镜到各种光谱学方法。随后将描述基于水平对齐的SWNT的原型应用，例如互连，场效应晶体管，集成电路，甚至是计算机。最后，本综述以挑战和对本研究领域未来发展的简要展望作了总结。从电子/探针显微镜到各种光谱学方法。随后将描述基于水平对齐的SWNT的原型应用，例如互连，场效应晶体管，集成电路，甚至是计算机。最后，本综述以挑战和对本研究领域未来发展的简要展望作了总结。