Co/LaSiO conducting bridge random access memory is a promising candidate for low power storage class memories due to its high endurance and short switching pulse width. Moisture has been hypothesized to be an important parameter in determining device retention. In this study, we anneal the LaSiO layers at different temperatures and pressures in order to reduce the absorbed moisture and improve retention. We evidence by Fourier transform infrared and x-ray reflectivity that the moisture content does not change with these anneal conditions. However, we find that increasing the amount of La–OH bonds is an effective way to improve the low resistance state retention.

中文翻译：

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La-OH 键对 Co/LaSiO CBRAM 保留的影响

Co/LaSiO 导电桥式随机存取存储器由于其高耐久性和短开关脉冲宽度而成为低功率存储类存储器的有希望的候选者。水分已被假设为确定设备保留的重要参数。在这项研究中，我们在不同的温度和压力下对 LaSiO 层进行退火，以减少吸收的水分并提高保留率。我们通过傅里叶变换红外和 X 射线反射率证明，水分含量不会随着这些退火条件而改变。然而，我们发现增加 La-OH 键的数量是改善低电阻状态保留的有效方法。