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Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
Applied Physics Letters ( IF 4 ) Pub Date : 2020-10-12 , DOI: 10.1063/5.0021626
Tae-Hyeon Kim 1 , Hussein Nili 2 , Min-Hwi Kim 1 , Kyung Kyu Min 1 , Byung-Gook Park 1 , Hyungjin Kim 3
Affiliation  

In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.

中文翻译:

TiOx/Al2O3 忆阻交叉阵列的复位电压相关精确调谐操作

在这封信中,我们介绍了基于 TiOx/Al2O3 的忆阻器件的复位电压相关精确调谐操作。对于具有高复位电压的高电阻状态 (HRS),观察到具有较大变化的突然设置操作,而通过低复位电压获得的 HRS 提供了逐渐且均匀的开关行为。针对周期到周期以及器件到器件的变化,分析了逐步切换和编程精度的改进。我们相信这些结果可用于在需要高精度调谐特性的领域中操作基于 TiOx/Al2O3 的忆阻器。
更新日期:2020-10-12
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