Recently, two-dimensional materials have shown great potential in the application of memories due to their atomic thickness and excellent electrical properties. Furthermore, van der Waals heterostructures consisting a variety of two-dimensional materials provide more possibilities for memory research. Here, we design a simple memory device based on the molybdenum disulfide/germanium diselenide (MoS2/GeSe2) van der Waals heterostructure, which exhibits a large memory window of about 10 V in the gate range of ±10 V. Its ratio of program/erase current reaches over 102 and remains after more than 2 × 103 s and 103 cycles, showing good stability and reliability. Compared to conventional floating gate memory, the device based on this structure provides promising advantages in the reduction of the device size and simplification of manufacturing.

中文翻译：

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堆叠用于存储器件的 MoS2/GeSe2 垂直范德瓦尔斯异质结构

近年来，二维材料由于其原子厚度和优异的电学性能，在存储器的应用中显示出巨大的潜力。此外，由多种二维材料组成的范德华异质结构为记忆研究提供了更多可能性。在这里，我们设计了一种基于二硫化钼/二硒化锗 (MoS2/GeSe2) 范德华异质结构的简单存储器件，在 ±10 V 的栅极范围内表现出约 10 V 的大存储窗口。擦除电流达到102以上，经过2×103 s和103次循环后仍保持不变，表现出良好的稳定性和可靠性。与传统的浮栅存储器相比，基于这种结构的器件在减小器件尺寸和简化制造方面具有很大的优势。