The origin of unintentional hydrogen incorporation in ZnO films grown by thermal atomic layer deposition is investigated by comparing layers deposited using H₂O and D₂O as oxygen precursors. Secondary ion mass spectroscopy measurements of as‐grown and 800 °C annealed layers provide evidence that the hydrogen contribution originating from the oxygen precursor is weakly chemically bound and is mostly removed by rapid thermal annealing conducted at 800 °C for 3 min in oxygen atmosphere. On the other hand, the remaining hydrogen introduced by ethyl groups originating from the metalorganic zinc precursor withstands such treatment.

中文翻译：

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原子层沉积生长的成膜退火ZnO薄膜中的氢

通过比较使用H ₂ O和D ₂ O作为氧前体沉积的层，研究了通过热原子层沉积生长的ZnO膜中无意掺入氢的起源。对生长的和800°C退火的层进行的二次离子质谱测量提供了证据，表明源自氧前体的氢成分化学结合较弱，并且在氧气氛中于800°C进行了3分钟的快速热退火后，大部分氢被除去。另一方面，源自金属有机锌前体的由乙基引入的剩余氢经得住这种处理。