In this paper, Dirac point method is used to study the interface state of one-dimensional photonic crystal heterojunction [Formula: see text] containing dispersive materials GaAs. We found that the energy levels of the interface states satisfy a simple sinusoidal function. We investigate the variation of the energy levels of the interface states with the incident angle, it is found that these interface states move toward high-frequency with the increase of the incident angle. At the same time, it is found that there is an extra localized band and it is further proved that the extra band corresponds to the defect band, and the energy levels of the defect band possess the same behavior with those of interface states.

中文翻译：

---

具有频率相关介电函数的光子晶体异质结构中多界面态的行为

本文采用狄拉克点法研究含有色散材料GaAs的一维光子晶体异质结[公式：见正文]的界面态。我们发现界面态的能级满足简单的正弦函数。我们研究了界面态的能级随入射角的变化，发现这些界面态随着入射角的增加向高频移动。同时，发现存在额外的局域能带，进一步证明了额外的能带对应于缺陷带，并且缺陷带的能级具有与界面态相同的行为。