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Effect of substrate nano-SiO2 hybridization on edge stress distribution of two-dimensional horseshoe-shaped interconnect under thermal load
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2020-10-15 , DOI: 10.35848/1347-4065/abbb21
Wanghang Gu , Cheng Chen , Rui Chen , Hanwei Zhao , Bing Liu

The stress distribution of the two-dimensional (2D) horseshoe-shaped interconnect in the flexible electronic composite film under thermal load is reported, and the effect of substrate nano-SiO2 hybridization on this stress distribution is studied. Experimental results show that when the temperature rises, stress concentration gradually occurs at the edge of 2D horseshoe-shaped interconnect. After nano-SiO2 hybridizing, the stress concentration at the edge is significantly reduced, and the strain stability near the edge is improved. When the substrate SiO2 content is greater than 8 wt%, the negative effect of thermal stress on the composite film is reduced to a very low level.

中文翻译:

衬底纳米SiO2杂化对热负荷下二维马蹄形互连边缘应力分布的影响

报道了热负荷下柔性电子复合膜中二维 (2D) 马蹄形互连的应力分布,并研究了衬底纳米 SiO2 杂化对该应力分布的影响。实验结果表明,当温度升高时,二维马蹄形互连的边缘逐渐出现应力集中。纳米SiO2杂化后,边缘处的应力集中明显降低,边缘附近的应变稳定性得到提高。当基材SiO2含量大于8wt%时,热应力对复合膜的负面影响降低到非常低的水平。
更新日期:2020-10-15
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