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Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy
Applied Microscopy Pub Date : 2020-10-14 , DOI: 10.1186/s42649-020-00043-6
Yena Kwon , Byeong-Seon An , Yeon-Ju Shin , Cheol-Woong Yang

In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga + ions. When these specimens are heated for real time observation, the Ga + ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar + ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar + ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar + ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.

中文翻译:

用于原位透射电子显微镜的基于微机电系统的芯片上从样品中去除 Ga 的方法

近年来,采用芯片式样品台的原位透射电子显微镜 (TEM) 支架已得到广泛应用。基于微机电系统 (MEMS) 的芯片上的样品通常通过聚焦离子束 (FIB) 铣削和异位剥离 (EXLO) 制备。然而,FIB 研磨的薄箔样品不可避免地被 Ga + 离子污染。当这些样品被加热进行实时观察时,Ga + 离子会影响保护层中的反应或聚集。本研究探索了一种在 FIB 系统中通过 Ar + 离子铣削去除 Ga 残留物的有效方法。然而,在进行 Ar + 离子铣削后,由 EXLO 从沟槽中提取的薄箔样品中仍有 Ga 残留物。为了解决这个缺点,将薄箔样品连接到 FIB 提升网格上,经过 Ar + 离子铣削,随后由 EXLO 转移到基于 MEMS 的芯片上。Ga残留物的去除通过能量色散光谱证实。
更新日期:2020-10-14
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