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A Survey of Analog-to-Digital Converters for Operation under Radiation Environments
Electronics ( IF 2.9 ) Pub Date : 2020-10-15 , DOI: 10.3390/electronics9101694
Ernesto Pun-García , Marisa López-Vallejo

In this work, we analyze in depth multiple characteristic data of a representative population of radenv-ADCs (analog-to-digital converters able to operate under radiation). Selected ADCs behave without latch-up below 50 MeV·cm2/mg and are able to bear doses of ionizing radiation above 50 krad(Si). An exhaustive search of ADCs with radiation characterization data has been carried out throughout the literature. The obtained collection is analyzed and compared against the state of the art of scientific ADCs, which reached years ago the electrical performance that radenv-ADCs provide nowadays. In fact, for a given Nyquist sampling rate, radenv-ADCs require significantly more power to achieve lower effective resolution. The extracted performance patterns and conclusions from our study aim to serve as reference for new developments towards more efficient implementations. As tools for this purpose, we have conceived FOMTID and FOMSET, two new figures of merit to compare radenv-ADCs that consider electrical and radiation performance.

中文翻译:

辐射环境下工作的模数转换器概述

在这项工作中,我们深入分析了具有代表性的radenv-ADC(能够在辐射下工作的模数转换器)群体的多个特征数据。所选ADC的性能不会低于50 MeV·cm的闩锁2/ mg,并且能够承受高于50 krad(Si)的电离辐射剂量。在整个文献中已经对具有辐射特征数据的ADC进行了详尽的搜索。对获得的收集物进行分析,并与科学ADC的技术水平进行比较,该技术已达到了几年前radenv-ADC提供的电气性能。实际上,对于给定的奈奎斯特采样率,radenv-ADC需要大得多的功率才能实现较低的有效分辨率。我们研究中提取的性能模式和结论旨在为朝着更有效的实施的新发展提供参考。作为用于此目的的工具,我们构思了FOMŤ一世d 和FOM小号ËŤ,这是两个新的性能指标,用于比较考虑电性能和辐射性能的radenv-ADC。
更新日期:2020-10-15
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