The article reports on radiation defect formation parameters and radiation resistance of multilayer coatings from thin layers of aluminum and silicon nitrides deposited on sodium-calcium-silicate glass and monocrystalline silicon substrates by reactive magnetron sputtering. The samples were irradiated with helium ions of 28 MeV on a cyclotron and carbon ions 200 keV on an accelerator in the mode of short-pulse implantation. The characteristics of local absorption and luminescence centers before and after irradiation and their probable nature were determined. The optical centers had been identified as point intrinsic defects of a growth and radiation nature. The accumulation of radiation defects in layers of amorphous silicon nitride a-Si3N4 prevailed over the accumulation in crystalline c-AlN layers due to the diffusion of defects in amorphous layers and the formation of secondary defects in them. Changes in optical properties led to the conclusion about the high radiation resistance of the coatings. The main reasons for the resistance of coatings to ion irradiation were the high concentration of growth defects, their strong interaction and the wide band gap of the nitrides. Coatings deposited on silicon substrates had a higher radiation resistance compared to the same coatings deposited on glass substrates.

该文章报告了通过反应磁控溅射沉积在钠钙硅酸盐玻璃和单晶硅基板上的铝和氮化硅薄层的多层涂层的辐射缺陷形成参数和耐辐射性。在短脉冲注入模式下，样品在回旋加速器上用 28 MeV 的氦离子和在加速器上的 200 keV 碳离子辐照。确定了辐照前后局部吸收和发光中心的特征及其可能的性质。光学中心已被确定为具有生长和辐射性质的点固有缺陷。由于非晶层中缺陷的扩散和二次缺陷的形成，非晶氮化硅 a-Si3N4 层中辐射缺陷的积累优于晶体 c-AlN 层中的积累。光学性能的变化导致了涂层具有高抗辐射性的结论。涂层抵抗离子辐照的主要原因是高浓度的生长缺陷、它们的强相互作用和氮化物的宽带隙。与沉积在玻璃基材上的相同涂层相比，沉积在硅基材上的涂层具有更高的耐辐射性。涂层抵抗离子辐照的主要原因是高浓度的生长缺陷、它们的强相互作用和氮化物的宽带隙。与沉积在玻璃基材上的相同涂层相比，沉积在硅基材上的涂层具有更高的耐辐射性。涂层抵抗离子辐照的主要原因是高浓度的生长缺陷、它们的强相互作用和氮化物的宽带隙。与沉积在玻璃基材上的相同涂层相比，沉积在硅基材上的涂层具有更高的耐辐射性。