Abstract

We have studied high-resolution low-temperature IR luminescence and absorption spectra of undoped high-quality SiC single crystals of the 4H and 6H hexagonal modifications. Narrow lines with a width of smaller than 0.2 cm^–1 have been revealed, with some of which being observed for the first time. We have found that some of the lines in the 4H and 6H modifications have similar structures; however, the lines in SiC-4H are shifted to the high-energy part of the spectrum by ~180 cm^–1. For the most intense quartet in the range of 1.3 µm, we have succeeded in constructing the energy structure of levels for both the 4H modification and the 6H modification based on their luminescence and absorption spectra.

中文翻译：

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4H和6H多型SiC单晶的高分辨率红外发光光谱中的新线

摘要

我们研究了4H和6H六角形修饰的未掺杂高质量SiC单晶的高分辨率低温红外发光和吸收光谱。已经发现宽度小于0.2 cm ^–1的细线，其中一些是首次观察到的。我们发现4H和6H修改中的某些行具有相似的结构；然而，SiC-4H中的谱线向光谱的高能部分偏移了〜180 cm ^–1。对于1.3 µm范围内最强的四重奏，我们已经基于4H修饰和6H修饰的发光和吸收光谱成功构建了能级结构。