In this paper, we investigate the suppression of reverse drain induced barrier lowering (RDIBL) in negative capacitance field effect transistors (NCFETs) with a multi-domain ferroelectric layer (FE) on a fully depleted silicon-on-insulator. We identify the challenges derived from the polarization variation along the channel. Through computer-aided design simulations, the transfer characteristics of the NCFET are analyzed at various drain voltages ( V DS ). It is found that the threshold voltage is positive-shifted by the increased V DS (RDIBL) and the RDIBL degrades the subthreshold swing (SS) and on-current. Based on the energy band analysis at various V DS s, it is revealed that the local drain-side energy band rising by the V DS –induced polarization variation along the channel causes the RDIBL. To suppress the RDIBL, an NCFET with an oxide trapping layer between the FE and the SiO 2 inter-layer is ...

中文翻译：

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使用氧化物电荷俘获层抑制负电容FDSOI场效应晶体管中反向漏极引起的势垒降低

在本文中，我们研究了在完全耗尽的绝缘体上硅上具有多畴铁电层（FE）的负电容场效应晶体管（NCFET）中对反向漏极感应势垒降低（RDIBL）的抑制作用。我们确定了沿通道极化变化所带来的挑战。通过计算机辅助设计仿真，可以在各种漏极电压（V DS）下分析NCFET的传输特性。发现阈值电压被增加的V DS（RDIBL）正移，并且RDIBL降低了亚阈值摆幅（SS）和导通电流。根据不同V DS s的能带分析，发现由V DS引起的局部漏极侧能带-沿沟道引起的极化变化会引起RDIBL。为了抑制RDIBL，