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Post-heat treatment effect on the properties of indium doped zinc oxide nanocrystals produced by the sol-gel method
Optical Materials Express ( IF 2.8 ) Pub Date : 2020-10-14 , DOI: 10.1364/ome.400912
Endris Taju Seid , Francis B. Dejene

Indium-doped zinc oxide (In:ZnO) nanocrystals are successfully produced by a simple refluxed sol-gel technique. The influence of post-heat treatment/ annealing temperatures on the structure, morphology, optical and luminescence properties of nanostructures was investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), energy dispersion X-ray spectroscope (EDS), UV–Vis and photoluminescence spectroscopies (PL). The XRD results revealed that the synthesized In:ZnO materials are nanocrystalline with a predominant hexagonal wurtzite structure. The average crystallite sizes and lattice constants of the In:ZnO nanoparticles increase with an increase in annealing temperature. SEM micrographs confirmed the nanostructure of the material and showed that the morphologies of In:ZnO nanoparticles varied from prism-like to spindle-like and then to disk-like structures. The reflectance band edge shifted towards longer wavelength while the band gap energy decreased with an increase in annealing temperature. In addition, the PL spectra show a sharp UV and broad yellow-orange emissions in the visible range that shifts slightly due to the influence of annealing temperature. The results illustrate that an optimum property of In:ZnO nanomaterial can be produced when the samples are annealed in the temperature range of 500 to 600 °C.

中文翻译:

后热处理对溶胶-凝胶法制备的铟掺杂氧化锌纳米晶性能的影响

通过简单的回流溶胶-凝胶技术成功制备了掺铟氧化锌 (In:ZnO) 纳米晶体。使用X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)研究后热处理/退火温度对纳米结构的结构、形貌、光学和发光性能的影响、能量色散 X 射线光谱仪 (EDS)、UV-Vis 和光致发光光谱仪 (PL)。XRD 结果表明合成的 In:ZnO 材料是纳米晶,具有主要的六方纤锌矿结构。In:ZnO 纳米颗粒的平均晶粒尺寸和晶格常数随着退火温度的升高而增加。SEM 显微照片证实了材料的纳米结构,并表明 In 的形貌:ZnO 纳米粒子从棱柱状到纺锤状,再到盘状结构。反射带边缘向更长波长移动,而带隙能量随着退火温度的升高而降低。此外,PL 光谱在可见光范围内显示出尖锐的 UV 和宽泛的黄橙色发射,由于退火温度的影响,这些发射略有变化。结果表明,当样品在 500 至 600 °C 的温度范围内退火时,可以产生最佳性能的 In:ZnO 纳米材料。PL 光谱在可见光范围内显示出尖锐的 UV 和宽泛的黄橙色发射,由于退火温度的影响,这些发射略有变化。结果表明,当样品在 500 至 600 °C 的温度范围内退火时,可以产生最佳性能的 In:ZnO 纳米材料。PL 光谱在可见光范围内显示出尖锐的 UV 和宽泛的黄橙色发射,由于退火温度的影响,这些发射略有变化。结果表明,当样品在 500 至 600 °C 的温度范围内退火时,可以产生最佳性能的 In:ZnO 纳米材料。
更新日期:2020-10-14
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