Abstract In this study, CuO thin films are grown by spin coating method as a function of La doping on n-Si substrates. The morphological properties of thin films have been analyzed by AFM images, and it has been observed that the roughness of thin films have been decreased with increasing La dopant concentration. The surface topography and chemical composition of thin films have been studied by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS), respectively. Then, the electrical characteristics of the fabricated heterostructures have been measured and analyzed under dark and illumination condition. All diodes show rectification behavior and sensitivity to light. It has been observed that the series resistance and ideality factor values, which are among the basic parameters of the diodes, have been improved by La content. Detailed examination of the photoelectrical properties of photodetectors has revealed that the photoresponsivity and detectivity of Au/(CuO:La)/n-Si have been significantly enhanced compared to the photodetector without La doped CuO. Results indicated that all structural and electrical parameters strongly depended on lanthanum concentration.

中文翻译：

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用 La 掺杂调节 Au/(CuO:La)/n-Si 光电二极管的电性能

摘要 在这项研究中，CuO 薄膜通过旋涂法生长，作为在 n-Si 衬底上掺杂 La 的函数。薄膜的形态特性已经通过 AFM 图像分析，并且已经观察到薄膜的粗糙度随着 La 掺杂剂浓度的增加而降低。分别通过扫描电子显微镜 (SEM) 和能量色散 X 射线光谱 (EDS) 研究了薄膜的表面形貌和化学成分。然后，在黑暗和光照条件下测量和分析了制造的异质结构的电特性。所有二极管都显示出整流行为和对光的敏感性。已经观察到，串联电阻和理想因子值是二极管的基本参数，已通过 La 含量得到改善。对光电探测器光电特性的详细检查表明，与没有掺杂 La 的 CuO 的光电探测器相比，Au/(CuO:La)/n-Si 的光响应性和探测率得到了显着提高。结果表明，所有结构和电气参数都强烈依赖于镧浓度。