Sol–gel-processed Ti-doped SnO 2 thin-film transistors (TFTs) were successfully fabricated for the first time, and the effects of the concentration of the Ti dopant on their structural, chemical, and optical properties were investigated. The introduced Ti dopant showed potential as a promising oxygen vacancy suppressor. Additionally, the results showed that the 0.1 wt% Ti-doped SnO 2 TFT had a field-effect mobility of 10.21 cm 2 V −1 s −1 , a subthreshold swing of 0.87, and an I on / I off value of ∼1 × 10 8 , as well as good negative bias stress characteristics. The success of the Ti doping could be attributed to its small ionic size, high Lewis acid strength, and strong bonding strength. Therefore, the introduced sol–gel-processed Ti-doped SnO 2 TFTs stand as promising candidates with potential for application in transparent displays as well as larger area electronics applicat...

中文翻译：

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溶胶-凝胶处理的掺钛SnO 2薄膜晶体管的负偏压稳定性得到改善

溶胶-凝胶法制备的掺Ti SnO 2薄膜晶体管（TFT）首次成功制备，并研究了Ti掺杂剂浓度对其结构，化学和光学性质的影响。引入的Ti掺杂剂显示出作为有希望的氧空位抑制剂的潜力。另外，结果表明，掺杂0.1wt％的Ti的SnO 2 TFT具有10.21cm 2 V -1 s -1的场效应迁移率，亚阈值摆动为0.87，并且I on / I off值为〜1。 ×10 8，以及良好的负偏应力特性。Ti掺杂的成功归因于其较小的离子尺寸，较高的路易斯酸强度和较强的键合强度。因此，