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Thermally Induced Electromechanical Fields in Unimorphs of Piezoelectric Dielectrics and Nonpiezoelectric Semiconductors
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2020-10-12 , DOI: 10.1080/10584587.2020.1803680
Yixun Luo 1 , Chunli Zhang 1 , Weiqiu Chen 1 , Jiashi Yang 2
Affiliation  

Abstract We study theoretically the electromechanical response of a thin unimorph consisting of a piezoelectric dielectric layer and a nonpiezoelectric semiconductor layer in coupled extension and bending under a uniform temperature change. The macroscopic theory of thermopiezoelectric semiconductors is used. A one-dimensional model is derived, from which an analytical solution is obtained. Numerical calculations show that the mobile charges in the semiconductor layer redistribute themselves under the electric field produced through the combined effects of thermoelastic, pyroelectric and piezoelectric couplings in different layers of the structure. The results are potentially useful for sensing and transduction between thermal and electric fields or currents, as well as thermo-piezotronics.

中文翻译:

压电电介质和非压电半导体单晶中的热感应机电场

摘要 我们从理论上研究了由压电介电层和非压电半导体层组成的薄单压电晶片在均匀温度变化下耦合延伸和弯曲的机电响应。使用了热压电半导体的宏观理论。导出一维模型,从中获得解析解。数值计算表明,半导体层中的移动电荷在通过结构不同层中的热弹性、热电和压电耦合的组合效应产生的电场下重新分布。结果对于热场和电场或电流以及热压电电子学之间的传感和转换可能有用。
更新日期:2020-10-12
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