Abstract Cadmium selenide (CdSe) thin films are widely used in electronic devices as well as a potential window material in solar cell applications. In this study, 100 nm CdSe thin films were grown on borosilicate glass substrates by using Radio Frequency (RF) magnetron sputtering technique at room temperature (25 °C). Deposited films were annealed in a vacuum furnace at 100 °C, 200 °C, 300 °C, 400 °C and 500 °C for 10 min, respectively. In-depth analysis of the microstructural and optoelectrical properties of annealed films were performed using X-ray diffraction (XRD), UV–Vis spectrometry and Hall Effect measurements. From XRD results, the films illustrated hexagonal structure with preferred orientation (002) at 2θ = 24.12°. UV–Vis study indicated that the transmission ranges were from 75% to over 85% for annealed samples and the calculated optical band gap was in the range 1.65 eV–1.73 eV. Optical properties demonstrated that CdSe had the potential to be incorporated as a window layer in solar cells. Meanwhile, the electrical measurements showed n-type conductivity with the carrier concentration of 1014 cm−3 for all the annealed films. The optimized results recommend sputtered CdSe thin films annealed at 400 °C as a possible window layer to the Cd-based solar cells.

中文翻译：

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射频磁控溅射法生长的 CdSe 薄膜的退火温度辅助显微结构和光电性能

摘要 硒化镉 (CdSe) 薄膜广泛应用于电子设备中，也是太阳能电池应用中潜在的窗口材料。在这项研究中，100 nm CdSe 薄膜在室温 (25 °C) 下使用射频 (RF) 磁控溅射技术在硼硅玻璃基板上生长。沉积的薄膜在真空炉中分别在 100°C、200°C、300°C、400°C 和 500°C 下退火 10 分钟。使用 X 射线衍射 (XRD)、紫外-可见光谱法和霍尔效应测量对退火薄膜的微观结构和光电特性进行了深入分析。从 XRD 结果，薄膜显示出在 2θ = 24.12° 处具有优选取向 (002) 的六边形结构。UV-Vis 研究表明，退火样品的透射范围从 75% 到超过 85%，计算出的光学带隙在 1.65 eV–1.73 eV 范围内。光学特性表明，CdSe 有可能作为太阳能电池的窗口层加入。同时，电学测量显示所有退火薄膜的载流子浓度为 1014 cm-3 的 n 型导电性。优化结果推荐在 400 °C 下退火的溅射 CdSe 薄膜作为 Cd 基太阳能电池的可能窗口层。