We report crystal growth and Raman spectroscopy characterization of pure and mixed bulk topological insulators Bi₂Se_3-xTe_x (x = 0–3). The series comprises of both binary (Bi₂Se₃, Bi₂Te₃) and ternary tetradymite (Bi₂Se₁Te₂, Bi₂Se₂Te₁, Bi₂Se_1·5Te_1.5) topological insulators. We analyzed in detail the Raman peaks of vibrational modes viz. out of plane A₁¹g, A₁²g and in-plane E_g² for both binary and ternary tetradymite topological insulators. Both out of plane A₁¹g and A₁²g exhibit obvious atomic size dependent peak shift and the effect is much lesser for the former than the later. The situation is rather interesting for in-plane E_g², which not only show the shift but rather a broader hump like structure. The de-convolution of the same show two clear peaks, which are understood in terms of the presence of separate in plane Bi–Se(I) and Bi–Te(I) modes in mixed tetradymite (Bi₂Se₂Te₁ and Bi₂Se_1·5Te_1.5) topological insulators. Summarily, various Raman modes of well-characterized pure and mixed topological insulator single crystals are reported and discussed in this article.

我们报告了纯的和混合的本体拓扑绝缘子Bi ₂ Se _3-x Te _x（x = 0-3）的晶体生长和拉曼光谱表征。该系列由二元（Bi ₂ Se ₃，Bi ₂ Te ₃）和三元四dy石（Bi ₂ Se ₁ Te ₂，Bi ₂ Se ₂ Te ₁，Bi ₂ Se _1·5 Te _1.5）拓扑绝缘体组成。我们详细分析了振动模的拉曼峰。超出平面A ₁ ¹ g，A ₁ ²g和面内E _g ^2分别适用于二元和三元四dy原子拓扑绝缘子。平面A ₁ ¹ g和A ₁ ² g两者均显示出明显的原子尺寸依赖性峰位移，并且前者的影响要远小于后者。对于平面内的E _g ^2来说，这种情况相当有趣，它不仅显示了偏移，而且显示了更宽的驼峰状结构。相同的去卷积显示出两个清晰的峰，这可以通过在混合四方体（Bi ₂ Se ₂ Te ₁和Bi中的Bi-Se（I）和Bi-Te（I）平面模式分开存在的角度来理解。₂ Se _1·5 Te _1.5）拓扑绝缘子。综上所述，本文报道并讨论了各种特性良好的纯和混合拓扑绝缘体单晶的拉曼模式。