Abstract Heterojunction photocatalysts with controllable compositions and textures have attracted extensive research interest in environmental pollutants degradation owing to the superior catalytic activity compared to their single component counterparts. Herein, a series of ultrathin-g-C3N4/AgI heterojunctions (UCNA) were prepared by ultrasonication-assisted liquid exfoliation of bulk g-C3N4 followed by characteristic inner-sphere surface complexation of Ag (I) and in-situ growth of AgI on ultrathin g-C3N4 nanosheets. The structural features and optical properties of all the prepared samples were investigated using X-ray powder diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), UV–vis diffused reflectance spectroscopy (UV–vis DRS) and photoluminescence spectroscopy (PL) prior performing photocatalytic activity. The as-prepared heterojunctions showed significant improvement in photocatalytic activity in comparison with pure AgI and g-C3N4 nanosheets with the complete degradation of rhodamine B (RhB) in 60 min at UCNA-70% sample under visible light irradiation with good recycling characteristics. The superior photocatalytic performance of the heterojunctions can be attributed to the combined effects of tightly coupled high-quality interface, appropriate energy band structure and position, along with the increased charge separation and migration efficiency. Based on the analysis of interfacial charge-transfer process across the ultrathin-g-C3N4/AgI heterojunction, a plausible photocatalytic mechanism of ultrathin-g-C3N4/AgI composites was presented.

中文翻译：

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原位制备超薄-g-C3N4/AgI异质结，提高光降解罗丹明B溶液的催化性能

摘要 具有可控组成和质地的异质结光催化剂由于与单组分对应物相比具有优异的催化活性，因此在环境污染物降解方面引起了广泛的研究兴趣。在此，通过超声辅助液体剥离块体 g-C3N4，然后进行特征性的 Ag (I) 内球表面络合和 AgI 在表面的原位生长，制备了一系列超薄 g-C3N4/AgI 异质结 (UCNA)。超薄 g-C3N4 纳米片。使用 X 射线粉末衍射 (XRD)、透射电子显微镜 (TEM)、X 射线光电子能谱 (XPS)、在进行光催化活性之前，UV-vis 漫反射光谱 (UV-vis DRS) 和光致发光光谱 (PL)。与纯 AgI 和 g-C3N4 纳米片相比，所制备的异质结显示出光催化活性的显着提高，在可见光照射下，在 UCNA-70% 样品中，罗丹明 B (RhB) 在 60 分钟内完全降解，具有良好的回收特性。异质结优异的光催化性能可归因于紧密耦合的高质量界面、适当的能带结构和位置以及增加的电荷分离和迁移效率的综合作用。基于超薄-g-C3N4/AgI异质结的界面电荷转移过程分析，