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The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon
Moscow University Physics Bulletin ( IF 0.3 ) Pub Date : 2020-10-13 , DOI: 10.3103/s0027134920030030
Yu. V. Balakshin , A. V. Kozhemiako , A. P. Evseev , D. K. Minnebaev , Emad M. Elsehly

Abstract

Single-crystal silicon has been irradiated with xenon ions at energies of 100 and 200 keV and argon ions at 110 keV. The irradiation fluence varied in the range of the displacement per atom (dpa) from 0.1 to 1 for both types of ions and selected energies. The influence of irradiation on the destruction of the silicon structure was studied using Rutherford backscattering (RBS) combined with channeling and Raman scattering (RS). The stages of silicon crystal structure destruction based on RBS and RS for different irradiation fluences are demonstrated. It is shown that defects accumulate in the modified layer as the fluence increases to a value corresponding to 0.5 dpa; then highly defective regions merge into amorphous layers. At a dpa of 1, the structure of a single crystal does not become disordered.



中文翻译:

氙和氩离子辐照参数对硅中缺陷形成的影响

摘要

用能量为100和200keV的氙离子和110keV的氩离子辐照单晶硅。对于两种类型的离子和选定的能量,辐照通量在每原子位移(dpa)的范围从0.1到1范围内变化。结合卢瑟福背散射(RBS)和沟道和拉曼散射(RS)研究了辐照对硅结构破坏的影响。说明了基于RBS和RS的硅晶体结构在不同辐照通量下的破坏阶段。结果表明,随着注量增加到相当于0.5 dpa的值,缺陷会累积在改性层中。然后高缺陷区域合并为非晶层。dpa为1时,单晶的结构不会变得无序。

更新日期:2020-10-13
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