We investigated defect generation in GaAs and InP on various blanket Si substrates and Si patterns with nanosized trench structures via transmission electron microscopy. The dependences of types of defects on the substrate orientation and the pattern size in GaAs and InP on nanosized patterns were analyzed. Defects that formed in a specific direction, and shapes similar to those stacking faults or twin boundaries (TWs) were confirmed. Moreover, we observed that unusual directional defects could not be effectively trapped by using aspect ratio trapping techniques owing to their various angles. The multi-twin (M-TW) angles generated from the original TW were calculated and projected in a pole figure by using the stereographic projection technique. Moreover, M-TW defects were illustrated via 3D computer graphics simulations.

中文翻译：

---

通过透射电子显微镜研究在纳米图案化硅上的 GaAs 和 InP 薄膜中产生的多孪晶缺陷

我们通过透射电子显微镜研究了 GaAs 和 InP 在各种覆盖硅衬底和具有纳米尺寸沟槽结构的硅图案上的缺陷产生。分析了缺陷类型对衬底取向和 GaAs 和 InP 中的图案尺寸对纳米图案的依赖性。确认了在特定方向上形成的缺陷，以及类似于那些堆垛层错或孪晶界 (TW) 的形状。此外，我们观察到，由于角度不同，使用纵横比捕获技术无法有效捕获异常的定向缺陷。使用立体投影技术计算从原始 TW 生成的多孪生 (M-TW) 角并将其投影为极图。此外，M-TW 缺陷是通过 3D 计算机图形模拟来说明的。