Ta-doped 0.94Bi_0.5Na_0.5TiO₃–0.06BaTiO₃ [(1 − x)(0.94BNT–0.06BT) − xTa (x = 0.00–0.02)] ceramics were prepared by a solid-state reaction process. X-ray diffraction (XRD) shows a rhombohedral symmetry with space group R3c for all samples. The introduction of Ta moves the low-temperature dielectric anomaly to lower temperature while the high-temperature dielectric anomaly becomes broader, although the dielectric permittivity is depressed slightly. Dielectric permittivity (ɛ_r) as a function of temperature for the sample x = 0.02 shows a stable and broad relative permittivity ∼ 3500 from 50 °C to 400 °C with low dielectric loss (tanδ) ≤ 0.02 from 80 °C to 340 °C (at 1 kHz). A Debye-like relaxation was found in the paraelectric region. The activation energy of relaxation frequency (E_a) of the samples x = 0, 0.005, 0.01, 0.02 is 0.62 eV, 0.84 eV, 1.15 eV and 1.20 eV and the activation energy of conduction (E_con) is 0.56 eV, 0.72 eV, 0.89 eV and 0.90 eV for x = 0.00, x = 0.005, x = 0.01 and x = 0.02, respectively, which are derived from isothermal impedance spectroscopy and admittance spectroscopy, respectively. The dielectric relaxation behavior is related to the migration of oxygen vacancies and cation vacancies dependence on the concentration of Ta.

通过固态反应过程制备了掺Ta的0.94Bi _0.5 Na _0.5 TiO ₃ -0.06BaTiO ₃ [（1-  x）（0.94BNT-0.06BT）  -x Ta（x  = 0.00-0.02）]陶瓷。X射线衍射（XRD）对所有样品均显示具有空间群R 3 c的菱面体对称性。Ta的引入虽然使介电常数稍有降低，但使低温介电异常向低温移动，而高温介电异常变宽。介电常数（ɛ _{- [R} ）作为温度的样本的函数X = 0.02示出了稳定的和广泛的相对介电常数〜3500从50℃至400℃下具有低介电损耗（tanδ δ）≤0.02从80℃至340℃（在1 kHz）。在顺电区发现了类似德拜的弛豫。样品x  = 0、0.005、0.01、0.02的弛豫频率（E _a）的活化能为0.62 eV，0.84 eV，1.15 eV和1.20 eV，传导的活化能（E _con）为0.56 eV，0.72 eV ，对于x  = 0.00，x  = 0.005，x  = 0.01和x的0.89 eV和0.90 eV = 0.02，分别来自等温阻抗谱和导纳谱。介电弛豫行为与氧空位的迁移和依赖于Ta浓度的阳离子空位有关。