Shallow trench isolation (STI) chemical mechanical planarization (CMP) will continue to be a critical step in the device fabrication of future technology nodes. A CMP process needs the right combination of pad, slurry, and pad conditioner to be able to deliver the best performance. Engineered pad surface along with usage of non-Prestonian ceria slurries can be used to solve key STI CMP challenges. Herein, it is demonstrated that relative to a reference pad, reducing and optimizing pad surface roughness, can help improve material removal rate by 26%–95% at different wafer pressures, lower the dishing by 34%–51% for feature size of 50–200 μ m, thereby leading to an improved planarization performance. This work illustrates that the surface texture of a pad can be used to achieve a stable dishing range over different feature scales for various over polish times. Also, optimizing the pad surface roughness minimizes slurry consumption by 33% and enables polishing at a lower down...

中文翻译：

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用于改善低于10 nm节点的CMP性能的焊盘的工程表面纹理

浅沟槽隔离（STI）化学机械平坦化（CMP）将继续是未来技术节点的器件制造中的关键步骤。CMP工艺需要衬垫，浆料和衬垫调节剂的正确组合，才能提供最佳性能。工程化的垫片表面以及非Prestonian氧化铈浆料的使用可用于解决STI CMP的关键挑战。本文证明，相对于参考焊盘，减少和优化焊盘表面粗糙度，可以在不同的晶圆压力下帮助将材料去除率提高26％–95％，对于尺寸为50的特征，将凹陷降低34％–51％ –200μm，从而改善了平面化性能。这项工作说明了垫的表面纹理可用于在各种过度抛光时间的不同特征尺度上实现稳定的凹陷范围。此外，优化抛光垫的表面粗糙度可将浆料消耗减少33％，并能在较低的抛光度下进行抛光...