A compact substrate integrated waveguide (SIW) antenna array that operates at 28 GHz and 38 GHz is proposed for fifth generation (5G) applications. The proposed array consists of four SIW cavities fabricated on one single layer of substrate. Each cavity implements a rhombic slot and a triangular-split-ring slot, resonating on TE₁₀₁ and TE₁₀₂ modes at 28 GHz and 38 GHz, respectively. In comparison with dual-band SIW antennas in the literature, the proposed configuration depicts a miniature footprint (28.7 × 30.8 mm²) without stacking substrates. To excite the four cavities with equal power, a broadband power divider that supports the propagation of TE₁₀ mode is designed. Accordingly, the impedance bandwidths are 26.6–28.3 GHz and 36.8–38.9 GHz. The measured realized peak gain over the lower and higher bands is 9.3–10.9 dBi and 8.7–12.1 dBi, respectively. The measured half-power beam widths (HPBWs) at 28 GHz and 38 GHz are 20.7° and 15.0°, respectively. Considering these characteristics, including dual bands, high gain, narrow beam widths, miniaturization, and single layer, the proposed antenna array is a suitable candidate for millimeter-wave 5G communication systems with the flexibility in switching operating frequency bands against channel quality variations.

中文翻译：

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适用于毫米波5G应用的微型双频基片集成波导缝隙天线阵列

提出了一种在28 GHz和38 GHz下工作的紧凑型基板集成波导（SIW）天线阵列，用于第五代（5G）应用。所提出的阵列由在单层基板上制造的四个SIW腔组成。每个腔体都有一个菱形槽和一个三角形裂环槽，分别在28 GHz和38 GHz的TE ₁₀₁和TE ₁₀₂模式下产生谐振。与文献中的双频SIW天线相比，所提出的配置描绘了无需堆叠基板的微型占位面积（28.7×30.8 mm ²）。为了激发具有相同功率的四个空腔，一个支持TE ₁₀传播的宽带功率分配器模式被设计。因此，阻抗带宽为26.6–28.3 GHz和36.8–38.9 GHz。在较低和较高频带上测得的实现峰值增益分别为9.3-10.9 dBi和8.7-12.1 dBi。在28 GHz和38 GHz处测得的半功率波束宽度（HPBW）分别为20.7°和15.0°。考虑到包括双频带，高增益，窄波束宽度，小型化和单层在内的这些特性，所提出的天线阵列是毫米波5G通信系统的合适候选者，具有灵活的工作频带以抵抗信道质量变化的切换。