The current-voltage characteristics and dielectric properties of indium and/or tantalum doped CaCu3Ti4O12 (CCTO) ceramics prepared by spark plasma sintering are investigated in this work. The X-ray diffraction patterns reveal the formation of pure cubic perovskite CCTO with no impurity phase. The grain size is suppressed by doping In and Ta, and the densification of the CCTO ceramics is achieved, showing a relative density of about 97.5%. The approach of 0.5 mol% In and Ta co-doping results in enhanced energy density and electrical properties. The energy density is increased by more than 30 % and the breakdown field Eb is improved to 9.67 kV/cm. Similarly, the lowest dielectric loss of 0.024 at nearly 1 kHz can be obtained in the co-doped sample, which can be attributed to the enhancement of the conductance activation energy and Schottky barrier height.

中文翻译：

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放电等离子烧结制备铟钽共掺杂CaCu3Ti4O12陶瓷介电性能的改善

本文研究了放电等离子体烧结制备的铟和/或钽掺杂的 CaCu3Ti4O12 (CCTO) 陶瓷的电流-电压特性和介电性能。X 射线衍射图显示形成了不含杂质相的纯立方钙钛矿 CCTO。通过掺杂In和Ta抑制晶粒尺寸，实现CCTO陶瓷的致密化，相对密度约为97.5%。0.5 mol% In 和 Ta 共掺杂的方法提高了能量密度和电性能。能量密度提高了 30% 以上，击穿场 Eb 提高到 9.67 kV/cm。类似地，在共掺杂样品中可以在接近 1 kHz 时获得 0.024 的最低介电损耗，