This work presents a self-biased 5 GHz hybrid class-B/F−1 oscillator for low phase noise and robust startup. The design exploits the concurrent conduction of nMOS and pMOS, when placed on differential sides, to form a differential-mode (DM) high-quality-factor second-harmonic resonator for low phase noise. The same resonator is shared between the main core (class-F−1) and the startup core (class-B), to allow phase noise reduction. The hybrid CMOS oscillator is fabricated in 22 nm fully depleted silicon-on-insulator (FDSOI) using thin-oxide-only devices, operated from 0.5 V supply, and achieves a phase noise <−147 dBc/Hz at 10 MHz offset across 11% tuning range. The peak figure of merit (FoM) is 190 dBc/Hz, and the supply frequency pushing ranges from 20–44 MHz/V, whereas the power consumption is from 15 to 18 mW. To the authors’ knowledge, the hybrid class-B/F−1 oscillator delivers the lowest phase noise using a 0.5 V supply at 5 GHz.

中文翻译：

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5 GHz 0.5 V 混合 B 类/F₋₁ CMOS 振荡器，使用体偏置 22 nm FDSOI，在 10 MHz 偏移处具有 -147 dBc/Hz 相位噪声

这项工作提出了一种自偏置 5 GHz 混合 B/F-1 类振荡器，用于低相位噪声和稳健启动。该设计利用 nMOS 和 pMOS 的同时传导，当放置在差分侧时，形成一个差模 (DM) 高品质因数二次谐波谐振器，用于低相位噪声。主内核（F-1 类）和启动内核（B 类）共享同一个谐振器，以降低相位噪声。混合 CMOS 振荡器采用 22 nm 全耗尽绝缘体上硅 (FDSOI) 制造，使用仅薄氧化物器件，由 0.5 V 电源供电，并在 11 MHz 偏移下实现 <-147 dBc/Hz 的相位噪声% 调谐范围。峰值品质因数 (FoM) 为 190 dBc/Hz，电源频率推动范围为 20–44 MHz/V，而功耗为 15 至 18 mW。据作者所知，