A harmonic-tuned (HT) voltage-controlled oscillator in a 65-nm CMOS process is demonstrated in this letter. The oscillation frequency and harmonics are tuned independently by two separated high- $Q$ resonators. A novel F₂₃ inductor–capacitor resonator resonating at the second and third harmonics simultaneously is introduced. The proposed F₂₃ inductor has a high-quality factor of 15 and 24 in common-mode (CM) and differential-mode (DM), respectively. The simulation results show that a 4.3-dB phase noise (PN) improvement is achieved in the thermal noise region due to the high- $Q$ HT method. Meanwhile, less harmonic currents are injected into the fundamental resonator due to the source-degeneration principle, hence decreasing the Groszkowski effect and suppressing the flicker noise. The measured PN is −117.5 dBc/Hz at the 1-MHz offset, and the tuning range is 12% from 6.80 to 7.66 GHz. The flicker noise corner is around 220 kHz and the figure-of-merit is 187.2 dBc/Hz. The power consumption is 5 mW under a 0.55-V supply.

中文翻译：

---

在 65 纳米 CMOS 中具有本征高 Q F₂₃ 电感器的谐波调谐 VCO

这封信展示了采用 65 纳米 CMOS 工艺的谐波调谐 (HT) 压控振荡器。振荡频率和谐波由两个分离的高频独立调谐 $Q$ 谐振器。介绍了一种新颖的 F ₂₃电感器-电容器谐振器，可同时在二次和三次谐波处谐振。建议的 F ₂₃电感器在共模 (CM) 和差模 (DM) 中分别具有 15 和 24 的高品质因数。仿真结果表明，在热噪声区域实现了 4.3-dB 相位噪声 (PN) 改善，这是由于高 $Q$ HT方法。同时，由于源极退化原理，较少的谐波电流注入基波谐振器，从而降低了格罗兹科夫斯基效应并抑制了闪烁噪声。在 1 MHz 偏移处测得的 PN 为 −117.5 dBc/Hz，调谐范围为 12%，从 6.80 到 7.66 GHz。闪烁噪声角约为 220 kHz，品质因数为 187.2 dBc/Hz。0.55V 电源下的功耗为 5mW。