In this letter, a frequency-tunable rectifier in the $C$ -band designed by a hybrid semiconductor integrated circuit (HySIC) concept is proposed. A GaAs monolithic microwave integrated circuit (MMIC) and a Si radio frequency integrated circuit (RFIC) were utilized as the HySIC configuration in the rectifier design. For the purpose of initial confirmation of this design validity, the GaAs and Si chips were fabricated and packaged onto the copper tungsten plate with gold plating. As measured results, frequency-tunable range from 3.82 to 4.55 GHz was measured. Maximum radio frequency (RF)–direct current (dc) conversion efficiency and output dc power in the measured power range from −10.0 to 17.8 dBm were 28.7% and 17.3 mW, respectively.

中文翻译：

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采用 GaAs MMIC 和 Si RFIC 的 HySIC 概念设计的 C 波段频率可调整流器

在这封信中，提出了一种由混合半导体集成电路 (HySIC) 概念设计的 $C$ 波段频率可调整流器。GaAs 单片微波集成电路 (MMIC) 和 Si 射频集成电路 (RFIC) 被用作整流器设计中的 HySIC 配置。为了初步确认这种设计的有效性，GaAs 和 Si 芯片被制造并封装在镀金的铜钨板上。作为测量结果，测量了 3.82 至 4.55 GHz 的频率可调范围。在-10.0 至 17.8 dBm 的测量功率范围内，最大射频 (RF)-直流 (dc) 转换效率和输出直流功率分别为 28.7% 和 17.3 mW。