An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10−7 A/cm2 at −1 V and a high rectification ratio of 1.5×108 at ±1 V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.

中文翻译：

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具有 ITO 结构的混合纳米级 Au 用于具有超低暗电流的高性能近红外硅基光电探测器

基于内部光电发射的硅光电探测器在室温下检测低于硅带隙的光，并且可以表现出光谱宽广的行为，使其有可能满足对近红外纯硅光电探测器的需求。在这项工作中，将薄金插入层实施到 ITO/n-Si 肖特基光电探测器中可以深刻影响势垒高度并显着提高器件性能。通过在硅衬底上制造纳米级薄 Au 层和 ITO 电极，我们实现了性能良好的 ITO/Au/n-Si 肖特基二极管，在 -1 V 下具有创纪录的 3.7×10−7 A/cm2 暗电流密度在±1 V时具有1.5×108的高整流比。此外，通过降低Au厚度，在不牺牲器件暗电流性能的情况下，响应度得到了显着提高。