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Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
Applied Physics Letters ( IF 4 ) Pub Date : 2020-10-05 , DOI: 10.1063/5.0023778 Arkka Bhattacharyya 1 , Praneeth Ranga 1 , Saurav Roy 1 , Jonathan Ogle 2 , Luisa Whittaker-Brooks 2 , Sriram Krishnamoorthy 1
Applied Physics Letters ( IF 4 ) Pub Date : 2020-10-05 , DOI: 10.1063/5.0023778 Arkka Bhattacharyya 1 , Praneeth Ranga 1 , Saurav Roy 1 , Jonathan Ogle 2 , Luisa Whittaker-Brooks 2 , Sriram Krishnamoorthy 1
Affiliation
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $\beta$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room temperature Hall mobility of 186 cm$^2$/Vs for the unintentionally doped films. N-type doping is achieved by using Si as a dopant and controllable doping in the range of 2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$ is studied. Si incorporation and activation is studied by comparing silicon concentration from secondary ion mass spectroscopy (SIMS) and electron concentration from temperature-dependent Hall measurements. The films exhibit high purity (low C and H concentrations) with a very low concentration of compensating acceptors (2$\times$10$^{15}$ cm$^{-3}$) even at this growth temperature. Additionally, abrupt doping profile with forward decay of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin films grown at 810$^{\circ}$C) is demonstrated by growing at a lower temperature.
中文翻译:
(010) β-Ga2O3 通过金属有机气相外延的低温同质外延:扩大生长窗口
在这项工作中,我们报告了在远低于金属有机气相外延的常规生长温度窗口的温度下生长的高迁移率 $\beta$-Ga$_2$O$_3$ 同质外延薄膜的生长。低温 $\beta$-Ga$_2$O$_3$ 薄膜在 600$^{\circ}$C 生长在 Fe 掺杂的 (010) 块状衬底上表现出显着的结晶质量,这从测量的室温中可以看出无意掺杂薄膜的霍尔迁移率为 186 cm$^2$/Vs。N型掺杂是通过使用Si作为掺杂剂实现的,可控掺杂范围为2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$被研究。通过比较二次离子质谱 (SIMS) 中的硅浓度和温度相关霍尔测量中的电子浓度来研究 Si 掺入和激活。即使在这种生长温度下,薄膜也表现出高纯度(低 C 和 H 浓度)和非常低浓度的补偿受体(2$\times$10$^{15}$cm$^{-3}$)。此外,通过在较低温度下生长证明了具有 5nm/dec 正向衰减的突然掺杂分布(与在 810$^{\circ}$C 下生长的薄膜观察到的相比提高了 10 倍)。
更新日期:2020-10-05
中文翻译:
(010) β-Ga2O3 通过金属有机气相外延的低温同质外延:扩大生长窗口
在这项工作中,我们报告了在远低于金属有机气相外延的常规生长温度窗口的温度下生长的高迁移率 $\beta$-Ga$_2$O$_3$ 同质外延薄膜的生长。低温 $\beta$-Ga$_2$O$_3$ 薄膜在 600$^{\circ}$C 生长在 Fe 掺杂的 (010) 块状衬底上表现出显着的结晶质量,这从测量的室温中可以看出无意掺杂薄膜的霍尔迁移率为 186 cm$^2$/Vs。N型掺杂是通过使用Si作为掺杂剂实现的,可控掺杂范围为2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$被研究。通过比较二次离子质谱 (SIMS) 中的硅浓度和温度相关霍尔测量中的电子浓度来研究 Si 掺入和激活。即使在这种生长温度下,薄膜也表现出高纯度(低 C 和 H 浓度)和非常低浓度的补偿受体(2$\times$10$^{15}$cm$^{-3}$)。此外,通过在较低温度下生长证明了具有 5nm/dec 正向衰减的突然掺杂分布(与在 810$^{\circ}$C 下生长的薄膜观察到的相比提高了 10 倍)。