A bi-tunable switchable dual-band THz absorber using vanadium dioxide (VO₂) and Dirac semimetal films (DSFs), which is independent on polarization, is proposed. The frequency and intensity of absorptances of the two absorption peaks can be dynamically changed by tuning the Fermi energy of the DSF or the VO₂ conductivity. Moreover, the absorber can alternate between an absorption function (with an absorptance of 99.4%) and a reflection function (with a reflectance of 77.4%) at the frequencies of absorption peak B in case of VO₂ transitions from metallic state to insulator state. In addition, the proposed absorber exhibits advantages such as polarization-independent nature and wide incident angle tolerance. This study provides references to future studies of THz bi-tunable dual-band or multi-band polarization-independent absorbers.

提出了一种使用二氧化钒（VO ₂）和狄拉克（Dirac）半金属膜（DSFs）的双可调可切换双频THz吸收器，该吸收器与极化无关。两个吸收峰的吸收率的频率和强度可以通过调节DSF的费米能量或VO ₂电导率来动态改变。此外，在VO _2的情况下，吸收体在吸收峰B的频率处可以在吸收函数（吸收率为99.4％）和反射函数（反射率为77.4％）之间交替。从金属态过渡到绝缘体态。此外，所提出的吸收器还具有诸如偏振无关的性质和宽入射角公差的优点。这项研究为太赫兹双调谐双波段或多波段偏振无关吸收器的未来研究提供了参考。