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Designs of photoabsorption-enhanced variable Al component GaN nanostructure for UV photodetectors
Physica E: Low-dimensional Systems and Nanostructures ( IF 3.3 ) Pub Date : 2020-10-10 , DOI: 10.1016/j.physe.2020.114496
Zhisheng Lv , Lei Liu , Xingyue Zhangyang , Yan Sun , Feifei Lu , Jian Tian

In this paper, we study the effect of geometric structure of gradient Al component AlxGa1-xN nanowires on their optical response. Based on the finite element simulation software Comsol Multiphysics, we systematically studied the optical properties of different geometric parameters of base radius (R), axis inclination (θ) and Angle of incident light (AOI). In the radial mode, we investigate the optical response of nanopillar and nanohole. Simulation results show that the AlxGa1-xN cathode can be omnidirectional and unified broadband light absorption by pillar nanostructured arrays with an axial inclination of 24°. In addition, Three-step Spicer emission model was used to establish the photoemission efficiency of graded Al component AlxGa1-xN nanostructure. All these findings not only indicate that the gradient Al component AlxGa1-xN material has a significant potential advantage over the UV photocathode, but it also provides an effective broadband and omnidirectional light absorption UV photocathode.



中文翻译:

用于紫外光电探测器的光吸收增强型可变Al组分GaN纳米结构的设计

在本文中,我们研究了梯度Al组分AlxGa1-xN纳米线的几何结构对其光学响应的​​影响。在有限元仿真软件Comsol Multiphysics的基础上,我们系统地研究了不同几何参数的基本半径(R),轴倾角(θ)和入射角(AOI)的光学特性。在径向模式下,我们研究了纳米柱和纳米孔的光学响应。仿真结果表明,AlxGa1-xN阴极可以通过轴倾斜24°的柱状纳米结构阵列实现全向和统一的宽带光吸收。另外,利用三步Spicer发射模型建立了梯度Al组分AlxGa1-xN纳米结构的光发射效率。

更新日期:2020-10-16
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