The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × $50\mathrm{\mu }\mathrm{m}$) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total silicon thickness of only $50\mathrm{\mu }\mathrm{m}$. Furthermore monolithic CMOS sensors can substantially reduce detector costs. These well-known advantages of CMOS sensor for performance and costs can only be exploited in pp-collisions at HL-LHC if the DMAPS sensors are designed to be radiation hard, capable of high hit rates and have a fast signal response to satisfy the 25 ns bunch crossing structure of LHC. Through the development of the MALTA and Mini-MALTA sensors we show the necessary steps to achieve radiation hardness at $10^{15}$ n${}_{eq}$/cm² for DMAPS with small electrode designs. The sensors combine high granularity (pitch 36.4x$36.4\mathrm{\mu }\mathrm{m}$²), low detector capacitance ($<$5fF/pixel) of the charge collection electrode ($3\mathrm{\mu }\mathrm{m}$), low noise (ENC$\approx$10 e${}^{-}$) and low power operation (1$\mu$W/pixel) with a fast signal response (25 ns bunch crossing). The sensors feature arrays of 512 × 512 (MALTA) and 16 × 64 (Mini-MALTA) pixels. To cope with high hit rates expected at HL-LHC ($>$200 MHz/cm²) we have implemented a novel high-speed asynchronous readout architecture. The paper summarises the optimisation of the pixel design to achieve radiation hard pixel designs with full efficiency after irradiation at $>$98% after $10^{15}$ n${}_{eq}$/cm²).

用于高光度LHC（HL-LHC）的跟踪检测器的升级要求开发新型的辐射硬硅传感器。耗尽型单块有源像素传感器的开发目标是用辐射坚硬的单块CMOS传感器替代混合像素检测器。我们使用具有小电极像素设计的TowerJazz 180 nm CMOS成像技术设计，制造和测试了辐射坚硬的单片CMOS传感器。这些设计可以实现远低于当前混合像素传感器的像素间距（通常为50× $50\mathrm{\mu }\mathrm{米}$）以提高空间分辨率。我们设计中的单片传感器允许通过减薄至仅硅的总厚度来减少多重散射$50\mathrm{\mu }\mathrm{米}$。此外，单片CMOS传感器可以大大降低检测器成本。如果DMAPS传感器设计为抗辐射，具有高命中率并具有快速信号响应以满足25种要求，那么CMOS传感器在性能和成本方面的这些众所周知的优势只能在HL-LHC的pp碰撞中加以利用。 ns大型强子对撞机的交叉结构。通过开发MALTA和Mini-MALTA传感器，我们展示了达到辐射硬度的必要步骤$\mathrm{1个}{0}^{15}$ ñ${}_{Ëq}$/ cm ²用于带有小电极设计的DMAPS。传感器结合了高粒度（间距36.4倍$36。4\mathrm{\mu }\mathrm{米}$²），低检测电容（$<$5fF /像素）的电荷收集电极（$3\mathrm{\mu }\mathrm{米}$），低噪音（ENC$\approx$10点${}^{-}$）和低功率操作（1$\mu$W /像素），具有快速的信号响应（25 ns束交叉）。传感器具有512×512（MALTA）和16×64（Mini-MALTA）像素的阵列。为了应对HL-LHC的高命中率（$>$200 MHz / cm ²），我们实现了一种新颖的高速异步读出架构。本文总结了像素设计的优化，以实现在辐射下全效率辐射硬像素设计。$>$98％之后 $\mathrm{1个}{0}^{15}$ ñ${}_{Ëq}$/ cm ²）。