Abstract

An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allowance for depletion of the number of atoms of the group V element (As) in the drop as a result of the island growth during As deposition from the gas–vapor phase. Various regimes of island formation, including a regime with growth arrest at small As concentrations in the drop have been theoretically studied. It is established that the growth arrest takes place when the As concentration decreases to an equilibrium level. The obtained results can be used in simulations of the growth kinetics of III–V semiconductor NWs, statistics of their nucleation, and NW length distribution functions, as well as for modeling of the crystalline phase growth and doping processes.

中文翻译：

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III–V半导体纳米线生长过程中核形成的自由能

摘要

通过汽-液-固（VLS）机理，得出了III-V半导体纳米线（NWs）生长过程中催化剂液相形成核的自由能的表达式，其中考虑了原子的耗竭。气相中的As沉积过程中，由于岛的生长，液滴中的V组元素（As）增加。理论上已经研究了各种岛形成方式，包括在小浓度的As浓度下停止生长的方式。可以确定的是，当As浓度降至平衡水平时，就会发生生长停滞。获得的结果可用于模拟III–V半导体NW的生长动力学，其成核统计和NW长度分布函数，