Ferromagnetic (FM)/antiferromagnetic (AFM) heterogeneous multilayer films have triggered tremendous interests for application in microwave/mm devices and components. However, with the development trend of miniaturization, high frequency, and lightweight of devices, the FM/AFM heterogeneous multilayers are desired to possess high saturation magnetization (4πM_s), low coercivity (H_c), and low ferromagnetic resonance (FMR) linewidth (∆H). Herein, the Ni₈₁Fe₁₉ (50 nm)/Fe₅₀Mn₅₀ (t nm)/Ni₈₁Fe₁₉ (50 nm) films were fabricated by DC magnetron sputtering, and the effects of thickness of the Fe₅₀Mn₅₀ on the microstructure, static, and microwave properties were investigated in detail. With increasing the FeMn film thickness, the saturation magnetization firstly increased and then decreased from 7947 to 9448 Gs. The in-plane coercivity firstly decreased and then increased from 28.58 to 0.6115 Oe, and the out-of-plane exchange bias field undergoes a transition from a negative exchange bias to a positive exchange bias. Besides, the ferromagnetic resonance linewidth firstly decreased and then increased from 142 to 87 Oe. Remarkably, with a 15-nm Fe₅₀Mn₅₀ film, the heterogeneous multilayer films achieved optimum performance with high saturation magnetization (9448 Gs), low coercivity (1.02 Oe), and low FMR linewidth (94 Oe). The outstanding Ni₈₁Fe₁₉/Fe₅₀Mn₅₀/Ni₈₁Fe₁₉ heterogeneous multilayer films exhibit great potentials in radar remote sensing, communication, and electronic countermeasure fields.

铁磁（FM）/反铁磁（AFM）异质多层膜已引起人们对在微波/毫米波器件和组件中的应用的极大兴趣。然而，随着小型化，高频率化的发展趋势，且重量轻的设备，所述FM / AFM异质多层都期望具有高的饱和磁化强度（4π中号_小号），低矫顽力（H ^ _{C ^}），和低的铁磁共振（FMR）线宽（∆ H）。在此，Ni ₈₁ Fe ₁₉（50nm）/ Fe ₅₀ Mn ₅₀（t  nm）/ Ni ₈₁ Fe ₁₉用直流磁控溅射制备了厚度为50 nm的薄膜，并详细研究了Fe ₅₀ Mn ₅₀的厚度对显微组织，静态和微波性能的影响。随着FeMn膜厚度的增加，饱和磁化强度先从7947 Gs减小到9448 Gs，然后减小。面内矫顽力先从28.58 Oe减小，然后增加到0.6115 Oe，面外交换偏置场经历了从负交换偏置到正交换偏置的转变。此外，铁磁共振线宽先减小后从142 Oe增加到87 Oe。值得注意的是，使用15纳米的Fe ₅₀ Mn ₅₀在多层膜中，该异质多层膜具有高饱和磁化强度（9448 Gs），低矫顽力（1.02 Oe）和低FMR线宽（94 Oe）的最佳性能。出色的Ni ₈₁ Fe ₁₉ / Fe ₅₀ Mn ₅₀ / Ni ₈₁ Fe ₁₉异质多层膜在雷达遥感，通信和电子对策领域具有巨大的潜力。