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Temperature-dependent Raman modes of MoS 2 /MoSe 2 van der Waals heterostructures
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-10-07 , DOI: 10.1088/1361-6641/abb526
Merve Öper , Yahaya Shehu , Nihan Kosku Perkgöz

Two-dimensional (2D) monolayer transition metal dichalcogenides (TMDs) show extra-ordinary properties compared to their bulk forms, which has inspired a large number of researchers to investigate these materials recently. Design and fabrication of different combinations of 2D TMDs layers can allow for high-performance and novel heterostructure-based devices, of which the performance will depend also on their thermal properties. On the other hand, the temperature-dependent behavior of such heterolayers and their interaction at different temperatures is still not comprehensively studied in a wide temperature range. In this work, we have performed a systematical temperature-dependent (83 K—483 K) Raman spectroscopic analysis of the MoS 2 /MoSe 2 van der Waals (vdW) heterostructures and discussed their stability. After the transfer process of the MoS 2 monolayers onto the MoSe 2 /SiO 2 /Si, we annealed the samples, which is a commonly u...

中文翻译:

MoS 2 / MoSe 2 van der Waals异质结构的温度相关拉曼模式

二维(2D)单层过渡金属二硫化碳(TMD)与其本体形式相比具有非凡的性能,这激发了许多研究人员最近对这些材料进行研究。2D TMD层的不同组合的设计和制造可以实现高性能和新颖的基于异质结构的器件,其性能还将取决于其热性能。另一方面,在宽温度范围内仍未全面研究这种异质层的温度依赖性行为及其在不同温度下的相互作用。在这项工作中,我们对MoS 2 / MoSe 2范德华(vdW)异质结构进行了系统的温度依赖性(83 K-483 K)拉曼光谱分析,并讨论了它们的稳定性。
更新日期:2020-10-08
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