Abstract

The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarization in the film, the value of the polarizing field, and also the PZT film annealing temperature.

中文翻译：

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多晶PZT薄膜中介电弛豫的准平稳过程

摘要

在外部电场的准静态变化期间，已经研究了在硅衬底上形成的多晶PZT膜中的弛豫过程。显示出介电弛豫的特征在于至少三个弛豫时间，这取决于膜中自极化的方向，极化场的值以及PZT膜退火温度。