Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se₂ (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization. The results revealed that the amount of surface Se on CIGS films annealed in a Se-free atmosphere is less than that on CIGS films annealed in a Se-containing atmosphere. Additionally, the lower amount of surface Se reduced the carrier concentration, enhanced the resistivity of the CIGS film and allowed CIGS/CdS interface recombination to be the dominant recombination mechanism of CIGS device. The increase of interface recombination reduced the efficiency of the device annealed in a Se-free atmosphere.

不额外硒化的四元溅射是制备Cu（InGa）Se ₂的低成本替代方法（CIGS）薄膜用于光伏。但是，如果没有硒化，则器件效率要比带有硒化的器件效率低得多。为了全面研究这个问题，我们比较了在有和没有其他硒化条件下制造的吸收体的形貌，深度分布，组成，电学性质和复合机理。结果表明，在无硒气氛中退火的CIGS膜上的表面硒含量小于在含硒气氛中退火的CIGS膜上的表面硒含量。另外，较低量的表面硒降低了载流子浓度，提高了CIGS膜的电阻率，并使CIGS / CdS界面复合成为CIGS器件的主要复合机理。界面复合的增加降低了在无硒气氛中退火的器件的效率。