当前位置: X-MOL 学术ECS J. Solid State Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-10-06 , DOI: 10.1149/2162-8777/abbcb4
Jun Fujise 1, 2 , Bonggyun Ko 1 , Toshiaki Ono 1 , Masaki Tanaka 2
Affiliation  

The critical stress behavior of low-oxygen-concentration silicon wafers was elucidated by measuring the critical stress of slip generated owing to scratches using the high-temperature three-point bending test method. It is well known that floating zone (FZ) wafers with low oxygen concentrations tend to easily cause slips from dislocation sources such as scratches. The first point observed in the study is that the critical shear stress of FZ wafers had no temperature dependence above 973 K, which may suggest the presence of long-range obstacles for dislocation motion. The second point is that slip generation from scratches was less likely to occur when oxygen atoms were inwardly diffused into the wafer surface by high-temperature thermal treatment. These results will contribute to solving the problem of slip generation from backside scratches, often created during the insulated gate bipolar transistor manufacturing process in which FZ wafers are used.

中文翻译:

表面氧浓度对浮动区硅晶片中晶片强度的影响

通过使用高温三点弯曲测试方法测量由于刮擦而产生的滑移的临界应力,从而阐明了低氧浓度硅晶片的临界应力行为。众所周知,具有低氧浓度的浮区(FZ)晶圆往往容易从位错源(例如划痕)引起滑移。研究中观察到的第一点是FZ晶片的临界剪切应力在973 K以上没有温度依赖性,这可能表明存在位错运动的远距离障碍。第二点是当通过高温热处理将氧原子向内扩散到晶片表面时,不太可能发生从划痕产生滑移的情况。这些结果将有助于解决背面刮擦产生打滑的问题,
更新日期:2020-10-07
down
wechat
bug