In the past three decades, organic semiconductor field-effect transistors (OFETs) have drawn intense attention as promising candidates for drive circuits of flat panel display, radio frequency identifications, chemical/bio-sensors, and other devices. Generally, the key parameters of OFETs, carrier mobility, threshold voltage, and on/off current ratio are closely related to the degree of order and surface/interface electronic structure of organic semiconductor (OSC) films. The ordering of films is crucially determined by the molecule-substrate interactions. On inert substrates (such as SiO₂) OSC films can hardly reach a high degree of ordering without growth templates, while traditional single crystal surfaces usually force the OSC molecules to deviate from their favorite assemble manner resulting in an unstable structure. Recently, the rise of two-dimensional materials (2D) provides a possible solution. The in-plane lattice of 2D materials can offer possible epitaxy templates for OSCs while the weak van der Waals (vdWs) interaction between OSC and 2D layers allows for more flexibility to realize the epitaxy growth of OSCs with their favored assemble manner. In addition, the various band structures tuned by the layer numbers of 2D materials encourage widely modified OSC electronic structures by interface doping between the OSC and 2D layers, which benefits the structure by obtaining high-performance OFETs. In this review, we emphasize and discuss the recent advances of OSC-2D hybrid OFETs. The OSC-2D heterostructures not only promote OFET device performances by film morphology/structure optimization and channel electronic structure modification, but also offer platforms for basic organic solids physics investigation and further functional optoelectronic devices.

在过去的三十年中，有机半导体场效应晶体管（OFET）作为平板显示器，射频识别，化学/生物传感器和其他设备的驱动电路的有希望的候选者而受到了广泛关注。通常，OFET的关键参数，载流子迁移率，阈值电压和开/关电流比与有机半导体（OSC）薄膜的有序度和表面/界面电子结构密切相关。薄膜的顺序关键取决于分子与底物的相互作用。在惰性基材上（例如SiO ₂没有生长模板，OSC膜很难达到高度有序的排列，而传统的单晶表面通常会迫使OSC分子偏离其喜欢的组装方式，从而导致结构不稳定。最近，二维材料（2D）的兴起提供了一种可能的解决方案。2D材料的面内晶格可以为OSC提供可能的外延模板，而OSC和2D层之间的弱范德华（vdWs）相互作用允许通过其有利的组装方式实现OSC外延生长的更大灵活性。另外，通过2D材料的层数调整的各种能带结构通过在OSC和2D层之间进行界面掺杂而鼓励了广泛修改的OSC电子结构，这通过获得高性能的OFET有益于结构。在这篇评论中 我们强调并讨论了OSC-2D混合OFET的最新进展。OSC-2D异质结构不仅通过薄膜形态/结构优化和通道电子结构改性来提高OFET器件的性能，而且还为基础有机固体物理研究和其他功能性光电器件提供了平台。