Abstract We present the results of the investigations of high conducting area and superconductivity at the interfaces between ferroelectric oxide and insulating oxide in heterostructures, isostructural to BaTiO3/LaMnO3 and BaTiO3/La2CuO4. The numerical simulations of these heterostructures have been performed. The temperature dependence of the measured electrical resistance of Ba0.8Sr0.2TiO3/LaMnO3 (BSTO/LMO) is compared to that exhibited by LaMnO3 (LMO) single crystals without the films. It is found that in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the normal to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior at low temperatures. The transition to the state with 2DEG at the interface is demonstrated. The effect of a magnetic field on heterostructure BSTO/LMO haves been investigated. It is shown that magnetic field changes strongly the resistivity of the interface BSTO/LMO. We study properties of the interface of the heterostructure Ba0.8Sr0.2TiO3/La2CuO4 and found the superconducting behavior with transition temperature Tc about 30 K. The proposed concept promises the ferroelectrically controlled interface conductivity and superconductivity. All this offers the possibility to design novel electronic devices.

中文翻译：

---

在铁电/介电界面处制造准二维导电区域和超导性

摘要 我们介绍了异质结构中铁电氧化物和绝缘氧化物之间界面处高导电面积和超导性的研究结果，与 BaTiO3/LaMnO3 和 BaTiO3/La2CuO4 同构。已经对这些异质结构进行了数值模拟。将 Ba0.8Sr0.2TiO3/LaMnO3 (BSTO/LMO) 的测量电阻的温度依赖性与没有薄膜的 LaMnO3 (LMO) 单晶所表现出的电阻进行比较。发现在具有薄膜的样品中，铁电体的极化轴沿单晶表面的法线定向，电阻随温度显着降低，在低温下表现出金属行为。演示了在界面上使用 2DEG 状态的转换。已经研究了磁场对异质结构 BSTO/LMO 的影响。结果表明，磁场强烈地改变了界面 BSTO/LMO 的电阻率。我们研究了异质结构 Ba0.8Sr0.2TiO3/La2CuO4 界面的性质，发现了转变温度 Tc 约为 30 K 的超导行为。所提出的概念保证了铁电控制的界面导电性和超导性。所有这些都为设计新颖的电子设备提供了可能性。所提出的概念保证了铁电控制的界面导电性和超导性。所有这些都为设计新颖的电子设备提供了可能性。所提出的概念保证了铁电控制的界面导电性和超导性。所有这些都为设计新颖的电子设备提供了可能性。