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Advances in Doped ZnO Nanostructures for Gas Sensor
The Chemical Record ( IF 6.6 ) Pub Date : 2020-10-05 , DOI: 10.1002/tcr.202000088
Chao‐Nan Wang 1 , Yu‐Liang Li 1 , Fei‐Long Gong 1 , Yong‐Hui Zhang 1 , Shao‐Ming Fang 1 , Hao‐Li Zhang 2
Affiliation  

Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n‐type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n‐type ZnO‐based semiconductor oxide sensing materials.

中文翻译:

气体传感器掺杂ZnO纳米结构的研究进展

基于金属氧化物半导体(MOS)的气体传感器引起了学术界和工业界的广泛关注。ZnO作为一种典型的MOS,具有宽带隙,n型传输特性和出色的电气性能,在有毒气体检测中具有潜在的应用前景。同时,掺杂是提高ZnO材料感测性能的有效途径。本文综述了不同类型的掺杂对ZnO材料的形貌,晶体结构,带隙和耗尽层的影响。还提供了有关提高ZnO感测性能的策略的理论分析。这篇评论为设计高效的n型ZnO基半导体氧化物感测材料提供了合理的见识。
更新日期:2020-12-12
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