This work reports contact engineered charge plasma junctionless transistor (CE‐CP‐JLT) to suppress the tunneling leakage current by deploying calibrated exhaustive 2‐D TCAD simulations. This analysis considered the detrimental effect due to the nonohmic source and drain side contacts by including universal Schottky tunneling and band‐to‐band tunneling models. Our study suggests to reduce the source/drain metal contacts to control the carriers tunneling in OFF state. This contact engineering can effectively minimizes the leakage with retained drive current capabilities. This would in turn improve the device switching behavior and I_ON/I_OFF current ratio at least by four orders. The reduction in leakage current leads to decrease in static power consumption. This facilitates the CE‐CP‐JLT deployment in a portable device for longer duration with same power supply. Further, the device sensitivity analysis with respect to electrode contact length, gate oxide thickness, dielectric constant, channel length and silicon film thickness is also analyzed. Moreover, the comparative analysis of device analog behavior is also carried out here.

中文翻译：

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接触工程电荷等离子体无结晶体管，用于抑制隧道泄漏

这项工作报告了接触式工程电荷等离子无结晶体管（CE-CP-JLT），以通过部署校准的详尽2D TCAD模拟来抑制隧道漏电流。该分析通过考虑通用肖特基隧穿和带间隧穿模型，考虑了由于非欧姆源极和漏极侧接触而产生的有害影响。我们的研究建议减少源极/漏极金属接触，以控制处于OFF状态的载流子隧穿。这种触点工程技术可有效保持驱动电流，最大程度地减少泄漏。反过来，这将改善设备的切换行为，并且I _ON / I _OFF当前比率至少要减四个订单。泄漏电流的减小导致静态功耗的减小。这有利于在使用相同电源的情况下将CE-CP-JLT部署在便携式设备中更长的时间。此外，还分析了关于电极接触长度，栅极氧化物厚度，介电常数，沟道长度和硅膜厚度的器件灵敏度分析。此外，这里还对设备模拟行为进行了比较分析。