Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

中文翻译：

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一种以电解质为活性电极的电阻器件

由于电阻式随机存取存储器（RRAM）在存储领域的卓越性能，近年来对电阻开关（RS）现象的研究变得极为引人注目。金属导电丝状RRAM的机理已经很清楚，但RS的条件尚不清楚。因此，本文旨在探索电阻发生的条件，使用一种称为电解质-氧化物-半导体 (EOS) 的新 RS 结构。这种结构是基于金属导电丝的形成，表现出单极开关特性。由于导电细丝的形成或断裂，该器件表现出不同的电阻状态。一系列电解质和导电丝模型用于解释该器件的 IV 曲线。与使用金属活性电极的器件相比，该器件的活性电极原本是离子化的。因此，探索离子迁移的机制和导电丝的形成将是一个更好的工具。RRAM 中金属的材料筛选也会更有效。